This work presents results of the
investigation of structural and morphological features of epitaxial InSb layers
in the AlAs matrix. Our research group used transmission electron microscopy
(TEM). The specimens were grown by molecular beam epitaxy and prepared in the
cross section (110) and plan view foils (100). We found a formation of the
embedded epitaxial layer of solid solution InxAl1-xSbyAs1-y in the AlAs matrix
during precipitation of In and Sb on the AlAs surface. The embedded layer had
continuous area (wetting layer) and islands. The study revealed two types of
islands in the epitaxial layer the first having coherent interfacing with the
matrix lattice and the second a relaxed island. We estimated concentration of
In, Sb in the solid solution by the indirect method. We used the method of
geometric phase to analyze the distribution of misfit dislocation cores on the
interface. Every misfit dislocation was formed by two close 600-dislocations
with the Burgers vectors like a /2 <110>. The sum Burgers vector of the
dislocation pair was in the plane of the interface.
Source:IOPscience
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