The depth-dependent electrical properties of InSb thin films grown on GaAs substrates result in an inherent magnetoresistance in the layers. For certain applications it is important to be able to manipulate this effect controllably. This paper demonstrates both experimentally and theoretically that the magnitude of the magnetoresistance can be dramatically changed by epilayer design. We show that the inclusion of a doped region in part of the layer structure allows the inherent magnetoresistance to be changed by a factor of 40.
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