The depth-dependent electrical properties of
InSb thin films grown on GaAs substrates result in an inherent
magnetoresistance in the layers. For certain applications it is important to be
able to manipulate this effect controllably. This paper demonstrates both
experimentally and theoretically that the magnitude of the magnetoresistance
can be dramatically changed by epilayer design. We show that the inclusion of a
doped region in part of the layer structure allows the inherent
magnetoresistance to be changed by a factor of 40.
Source:IOPscience
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