Gas mixture influence on the reactive ion etching of InSb in an inductively coupled methane-hydrogen plasma

In this paper, inductively coupled plasma etching of InSb material has been investigated using methane–hydrogen chemistry. Plasma conditions were first studied in terms of bias autopolarization, partial methane quantity in a CH4/H2 mixture and chamber pressure. The surface morphology of the etched samples was analyzed using an atomic force microscope, scanning electron microscope and x-ray photoelectron spectrometry (XPS) measurements. The results highlight the difficulties in removing etching products related to In, and the surface roughness is mainly correlated with the methane ratio in the mixture. The best surface stoichiometry, with a surface roughness of 7 nm and an etch rate of 110 nm min−1, was obtained with the addition of argon. To evaluate the feasibility of high performance infrared photodiodes, InSb monopixels were fabricated by dry etching, electrically characterized under illumination and compared with devices obtained by wet etching.

Source:IOPscience

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Strain energy of (111) and ([111 over bar]) surfaces of InSb

The strain energies per unit area of polished (0.1 μm powder) surfaces of InSb have been computed from the observed curvature of thin wafers polished on one side and etched on the other, as being of order 1 erg cm-2. These values are much larger than those computed by others from InSb wafers treated similarly on both sides and are ascribed only indirectly to surface bonding configurations.

Source:IOPscience

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Characterization of Al2O3/InSb/Si MOS diodes having various InSb thicknesses grown on Si(1 1 1) substrates

This paper discusses the capacitance–voltage (C–V) characteristics of Al2O3/InSb/Si (1 1 1) MOS diodes grown using MBE via InSb bi-layer with special care to the surface reconstruction. This growth technique is based on our finding that the InSb layer grown on a Si (1 1 1) substrate is rotated by 30° with respect to the substrate under certain initial conditions. This rotation drastically reduces the lattice mismatch from 19.3% to 3.3%, and improves the crystal quality of an InSb layer. To investigate the possibilities of InSb MOSFETs on Si substrates, we fabricated MOS diodes having an Al2O3 insulator film deposited by atomic layer deposition. C–V characteristics were measured both at RT and 77 K. It was found that the InSb grown on Si shows a degraded C–V curve compared to the InSb substrate, even though the mobility of the grown layer is quite high. We also investigated the effects of InSb thickness on the C–V characteristics of the MOSFETs. It was found that the quality of MOS diodes first degrades when decreasing the InSb thickness from 1 μm to 50 nm; further reduction of the InSb thickness improves it again. It was demonstrated that the MOS diode having a 10 nm InSb layer shows a good C–V curve, which is comparable to that of the InSb substrate. Finally, we discussed the possibility of the InSb/Si pseudomorphic MOSFETs.

Source:IOPscience

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send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Strain energy of (111) and ([111 over bar]) surfaces of InSb

The strain energies per unit area of polished (0.1 μm powder) surfaces of InSb have been computed from the observed curvature of thin wafers polished on one side and etched on the other, as being of order 1 erg cm-2. These values are much larger than those computed by others from InSb wafers treated similarly on both sides and are ascribed only indirectly to surface bonding configurations.

Source:IOPscience

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send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com