High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

Abstract

Compound semiconductor InSb crystals were grown using raw materials with different purities, for application as radiation detector substrates. The electrical properties of the grown crystals were compared with those of commercial InSb wafers. The resistivity of the grown crystals prepared from 99.9999% purity raw materials showed a higher value than those of commercial crystals.

Source: Iopscience

For more information about InSb wafer, please visit our website:www.powerwaywafer.com,send us email at: angel.ye@powerwaywafer.com or  or powerwaymaterial@gmail.com

THz Wave Modulator Based on the Decay of THz Surface Plasmon along an Intrinsic InSb Surface

Abstract

THz surface plasmon are decayed exponentially when propagating along the surface of a semiconductor. A metal razor bladeis used to couple THz surface plasmon to THz waves at different position on the surface of an indium antimonide wafer. Thus the intensity of the output THz wave is modulated.

Keywords：InSb wafer,

Source: Iopscience

For more information about InSb wafer, please visit our website:www.powerwaywafer.com,send us email at: angel.ye@powerwaywafer.com or  or powerwaymaterial@gmail.com

Brolis Semiconductors Ltd. Receives Shipment of Veeco MBE Production System

Brolis Semiconductors Ltd. and Veeco Instruments Inc. (Nasdaq: VECO) announced today that Brolis has received shipment of a Veeco GEN200® Edge™ Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial wafer production facility in Vilnius, Lithuania.

Dominykas Vizbaras, CEO of Brolis, commented, “The mission of our company is to become a world-leading provider of complex epitaxial structures for long-wave optoelectronics, such as thermal imaging, concentrator photovoltaic and other custom devices. Veeco is the world’s leading provider of production MBE systems, so we anticipate that the GEN200 will enable us to be extremely competitive in terms of wafer quality, speed to market, and cost effectiveness of our products.”

Jim Northup, Vice President and General Manager of Veeco’s MBE Operations, commented, “We are pleased Brolis has chosen Veeco as their MBE equipment supplier as they open their new state-of-the-art epitaxial manufacturing fab. The GEN200 will support Brolis’ market penetration goals with its production-proven performance and the industry’s lowest cost of ownership.”

About the Veeco GEN200 Edge MBE System
The most cost-effective and highest-capacity multi-4" production MBE system in the market today, the Veeco GEN200 Edge MBE System delivers superior throughput, long campaigns and excellent wafer quality in growing epitaxial wafers for custom devices.

About Brolis Semiconductors Ltd
Brolis Semiconductors Ltd. manufactures type-I GaSb laser diodes for wavelength range 1800nm – 4000nm and offers high-throughput MBE service of arsenides and antimonides on GaSb, InSb, InAs, GaAs and InP substrates. Our key technologies include growth of mixed group-V antimonides and quinternary heterostructures, which is very important for most infrared optoelectronic device applications such as type-II superlattice FPAs, GaSb laser diodes, tunnel junction devices, etc.

• Keywords:
• North America
• Veeco
• Brolis Semiconductors Ltd

SOURCE:LEDinside

If you need more information about InSb wafer,please visit our website:www.powerwaywafer.com/Indium-Semiconductor-wafer.html or send us email to  powerwaymaterial@gmail,com

Brolis Semiconductors Ltd. Receives Shipment of Veeco MBE Production System

Brolis Semiconductors Ltd. and Veeco Instruments Inc. (Nasdaq: VECO) announced today that Brolis has received shipment of a Veeco GEN200® Edge™ Molecular Beam Epitaxy (MBE) production system for installation at their new epitaxial wafer production facility in Vilnius, Lithuania.

Dominykas Vizbaras, CEO of Brolis, commented, “The mission of our company is to become a world-leading provider of complex epitaxial structures for long-wave optoelectronics, such as thermal imaging, concentrator photovoltaic and other custom devices. Veeco is the world’s leading provider of production MBE systems, so we anticipate that the GEN200 will enable us to be extremely competitive in terms of wafer quality, speed to market, and cost effectiveness of our products.”

Jim Northup, Vice President and General Manager of Veeco’s MBE Operations, commented, “We are pleased Brolis has chosen Veeco as their MBE equipment supplier as they open their new state-of-the-art epitaxial manufacturing fab. The GEN200 will support Brolis’ market penetration goals with its production-proven performance and the industry’s lowest cost of ownership.”

About the Veeco GEN200 Edge MBE System
The most cost-effective and highest-capacity multi-4" production MBE system in the market today, the Veeco GEN200 Edge MBE System delivers superior throughput, long campaigns and excellent wafer quality in growing epitaxial wafers for custom devices.

About Brolis Semiconductors Ltd
Brolis Semiconductors Ltd. manufactures type-I GaSb laser diodes for wavelength range 1800nm – 4000nm and offers high-throughput MBE service of arsenides and antimonides on GaSb, InSb, InAs, GaAs and InP substrates. Our key technologies include growth of mixed group-V antimonides and quinternary heterostructures, which is very important for most infrared optoelectronic device applications such as type-II superlattice FPAs, GaSb laser diodes, tunnel junction devices, etc.

• Keywords:
• North America
• Veeco
• Brolis Semiconductors Ltd

SOURCE:iopscience

If you need more information about InSb wafer,please visit our website:www.powerwaywafer.com/Indium-Semiconductor-wafer.html or send us email to  powerwaymaterial@gmail,com

Diamond turning of small Fresnel lens array in single crystal InSb

Abstract

A small Fresnel lens array was diamond turned in a single crystal (0 0 1) InSb wafer using a half-radius negative rake angle (−25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors.

Keywords:InSb wafer,

SOURCE:iopscience

If you need more information about InSb wafer,please visit our website:www.powerwaywafer.com/Indium-Semiconductor-wafer.html or send us email to  powerwaymaterial@gmail,com