We have investigated the structural and
electrical properties of InAsxSb1−x epilayers grown on GaAs(0 0 1) substrates
by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an
InSb buffer layer. The arsenic composition (x) of the InAsxSb1−x epilayer was
calculated using x-ray diffraction and found to be 0.5. The graded layers were
grown with As temperature gradients of 2 and 0.5 °C min−1. The
three-dimensional (3D) island growth due to the large lattice mismatch between
InAsSb and GaAs was observed by scanning electron microscopy. As the
thicknesses of the InAsSb graded layer and the InSb buffer layer are increased,
a transition from 3D island growth to two-dimensional plateau-like growth is
observed. The x-ray rocking curve measurements indicate that full-width at
half-maximum values of the epilayers were decreased by using the graded and
buffer layers. A dramatic enhancement of the electron mobility of the grown
layers was observed by Hall effect measurements.
Source:IOPscience
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