High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application

High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of V/III ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-  -thick InSb epilayer grown at 450°C with a V/III ratio of 5 and an indium pre-deposition time of 2.5 s exhibits the optimum material quality, with a root-mean-square surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 104 cm2/ . These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10mV with the input voltage of 1V at 9.3mT and the electron mobility of 3.2 × 104 cm2/  is determined, which indicates a strong potential for Hall applications.

Source:IOPscience

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Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer

The n-type InSb films were prepared on Si(111) substrates with a two-step growth method via an InSb bilayer. This growth method consists of an initial low-temperature InSb layer growth and a subsequent high-temperature InSb layer growth. In order to obtain a heteroepitaxial InSb film with a high electron mobility, the growth conditions of the first InSb layer were optimized. The first InSb layer was prepared at higher growth temperatures. Moreover, the thickness of the first InSb layer with a lower crystalline quality and poor electrical properties decreased. InSb films prepared with new deposition conditions showed a higher crystalline quality, a lower defects density, and better electrical properties than the films indicated in our previous report. An InSb film with a high electron mobility of 38,000 cm2/(Vcenterdots) which shows a high potential for new high-speed device applications was obtained.

Source:IOPscience

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Step Hall Measurement of InSb Films Grown on Si(111) Substrate Using InSb Bilayer

We investigated the in-depth profile of electrical properties of InSb films grown on Si(111) substrates using various InSb bilayers. The InSb bilayers were prepared using three types of initial In-induced surface reconstructions on Si(111) substrates such as √3×√3-In, 2×2-In, and √7×√3-In. The InSb films were grown using a two-step growth procedure. In the growth procedure, the 1st layer was deposited using at a low growth rate of about 1 Å/min. The in-depth profile of the electrical properties of the InSb films was obtained by reciprocally repeated chemical etching and Hall measurement. The electron mobility of the films was gradually decreased with decreasing thickness. The electron mobility at room temperature of the InSb film grown via √7×√3-In surface reconstruction was estimated to be about 61,000 cm2/(Vcenterdots) in the region near the surface and about 20,000 cm2/(Vcenterdots) in the region approximately 0.2 µm from the InSb/Si interface. These indicate that the high electron mobility of the samples grown on the InSb bilayer using at a low growth rate during the first layer deposition originated from the reduction of the regions with low electron mobility near the InSb/Si interface.

Source:IOPscience

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