InSb overlayers on Sb, obtained by UHV
deposition of In onto heated substrates, are analysed by Raman spectroscopy.
Well defined peaks from the InSb phonons are observed already at five
monolayers coverage. The phonon frequencies of the overlayer as well as the
substrate show shifts which reveal the following strain; compressive in the
InSb overlayer and tensile in the Sb substrate top region. Also, the InSb LO
intensity shows an anomalous behaviour for thin coverages, possibly due to the
gradual development of the InSb electronic band structure.
Source:IOPscience
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