Friday, June 14, 2019

Epitaxial InSb(111) layers on Sb(111) substrates characterised by Raman spectroscopy

InSb overlayers on Sb, obtained by UHV deposition of In onto heated substrates, are analysed by Raman spectroscopy. Well defined peaks from the InSb phonons are observed already at five monolayers coverage. The phonon frequencies of the overlayer as well as the substrate show shifts which reveal the following strain; compressive in the InSb overlayer and tensile in the Sb substrate top region. Also, the InSb LO intensity shows an anomalous behaviour for thin coverages, possibly due to the gradual development of the InSb electronic band structure.


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