Monte Carlo calculations of the electron impact ionization in n-type InSb crystal

Monte Carlo computer simulations of electron impact ionization in InSb crystal are carried out for both instantly switched on dc and high-frequency electric fields. It is established that the rate of generation of electron–hole pairs decreases with the increase of electric field frequency, due to the inertia of electron heating by high-frequency electric field. For fields oscillating at frequencies much higher than the reciprocal momentum relaxation time, the impact ionization threshold field is found to be a linear function of frequency. Good agreement between calculations and available experimental data has been obtained.

Source:IOPscience

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Dislocation motion in InSb crystals under a magnetic field

Dislocation displacements under the action of a permanent magnetic field without mechanical loading in differently doped InSb crystals are investigated. The dependences of the mean dislocation path length and the relative number of divergence and tightening half-loops on the magnetic induction and preliminary load are obtained. Experiments on n-InSb crystals with Te impurities and on p-InSb crystals with Ge impurities have shown a sensitivity of the magnetoplasticity to the conductivity type and the dopant content. Study of the magnetoplastic effect in the initial deformed InSb crystals shows that internal stresses decrease the lengths of divergence dislocation paths and simultaneously increase the threshold magnetic field above which the magnetoplastic effect exists. Possible reasons for the observed phenomena are discussed.

Source:IOPscience

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