Schottky and pn junction detectors were fabricated with p-InSb. Fabrication methods, energy spectra of 241Am alpha particles and rise times are shown. We could observe pulses at operating temperatures up to 77 and 115 K for the Schottky and the pn junction detectors, respectively.
Single crystalline InSb nanowires with high uniformity have been obtained on InSb substrate.
We realized controllable growth orientation of InSb nanowire by MOCVD.
A vapor-solid-solid growth of mode was attributed to the InSb nanowire growth.
The prepared InSb NWs show promise for future application in nanoelectronic devices.
We have synthesized InSb nanorods on InSb substrates by using metal-organic chemical vapor deposition (MOCVD). It is found that the crystal orientation of the substrate plays a remarkable role in controlling growth orientation of the InSb nanorods. On a -oriented InSb substrate, the nanorods tend to lie on the substrate along its [1–10]-axis. In comparison, -oriented InSb substrates tend to promote the vertical growth of InSb nanowires and free-standing InSb nanowires are consequently obtained. The evolutions of diameter and length of the nanowires on InSb (111) substrates as a function of growth temperatures, T, and input V/III source ratios, rV/III, provide the optimized growth condition, i.e., T = 400 °C and rV/III = 50. The orientated growth of one-dimensional InSb nanostructures is discussed and analized by employing a vapor-solid-solid (VSS) growth mechanism.
Metal-organic chemical vapor deposition
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We report on the temperature-dependent electrical properties of high-quality undoped InSb layers of various thicknesses grown on GaAs(100) substrates by molecular beam epitaxy. The layers are found to be n-type in the measured temperature range (77–297 K). A differential Hall approach was employed to characterize the depth dependence of the electrical properties of the InSb films. The temperature variations of these data were then modelled with the inclusion of conduction through an impurity band, formed by the overlap of the wavefunctions of the dislocation-related donors. These analyses suggest that the contribution of the impurity band is dominant close to the interface even at room temperature, but its effect falls with increasing thickness, until at ~1000 nm, its contribution is only comparable to that of the conduction band at low temperatures. The dislocation donor densities deduced from this modelling follow an approximately reciprocal trend with increasing distance from the interface.