New Material to Help Chips Run Cooler, Use Less Energy

Intel Corporation today announced development of a new, ultra-fast, yet very low power prototype transistor using new materials that could form the basis of its microprocessors and other logic products beginning in the second half of the next decade.

Intel and QinetiQ researchers have jointly demonstrated an enhancement-mode transistor using indium antimonide (InSb) to conduct electrical current. Transistors control the flow of information/electrical current inside a chip. The prototype transistor is much faster and consumes less power than previously announced transistors. Intel anticipates using this new material to complement silicon, further extending Moore’s Law.

“The results of this research reinforce our confidence in being able to continue to follow Moore’s Law beyond 2015. As was the case with other Intel technical advancements, we expect these new materials will enhance the future of silicon-based semiconductors,” said Ken David, director of components research for Intel's Technology and Manufacturing Group “By providing 50 percent more performance while reducing power consumption by roughly 10 times, this new material will give us considerable flexibility because we will have ability to optimize for both performance and power of future platforms.”

InSb is in a class of materials called III-V compound semiconductors which are in use today for a variety of discrete and small scale integrated devices such as radio-frequency amplifiers, microwave devices and semiconductor lasers.

Researchers from Intel and QinetiQ have previously announced transistors with InSb channels. The prototype transistors being announced today, with a gate length of 85nm, are the smallest ever, at less than half the size of those disclosed earlier. This is the first time that enhancement mode transistors have been demonstrated. Enhancement mode transistors are the predominant type of transistor used in microprocessors and other logic. These transistors are able to operate at a reduced voltage, about 0.5 volts – roughly half of that for transistors in today’s chips – which leads to chips with far less power consumption.

Details will be provided at the IEDM conference Dec. 5-7, in Washington, D.C., where the formal paper describing this advancement will be delivered. The paper is titled, “85nm Gate Length Enhancement and Depletion mode InSb Quantum Well Transistors for Ultra High Speed and Very Low Power Digital Logic Applications.”

Keywords: New materials, InSb, III-V compound semiconductors,  Intel technical, Silicon-based  

                 semiconductors, 

Source:Intel

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Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection

The interfaces of InAs/GaSb superlattices (SLs) were studied with the goal of improving interband cascade infrared photodetectors (ICIPs) designed for the long-wavelength infrared region. Two ICIP structures with different SL interfaces were grown by molecular beam epitaxy, one with a ~1.2 monolayer (ML) InSb layer inserted intentionally only at the GaSb-on-InAs interfaces and another with a ~0.6 ML InSb layer inserted at both InAs-on-GaSb and GaSb-on-InAs interfaces. The material quality of the ICIP structures was similar according to characterization by differential interference contrast microscopy, atomic force microscopy, and x-ray diffraction. The performances of the ICIP devices were not substantially different despite the different interface structure. Both ICIPs had a peak detectivity of >3.7 × 1010 Jones at 78 K with a cutoff wavelength near 9.2 μm. The maximum operation temperatures of both ICIPs were as high as ~250 K, although the structures were not fully optimized. This suggests that the two interface arrangements may have a similar effect on structural, optical and electrical properties. Alternatively, the device performance of the ICIPs may be limited by mechanisms unrelated to the interfaces. In either case, the arrangement of dividing a thick continuous InSb layer at the GaSb-on-InAs interface into thinner InSb layers at both interfaces can be used to achieve strain balance in SL detectors for longer wavelengths. This suggests that with further improvements ICIPs should be able to operate at higher temperatures at even longer wavelengths.

Keywords: InAs/ GaSb, ICIPs,  InSb, 
Source: Iopscience

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