We investigated the in-depth profile of
electrical properties of InSb films grown on Si(111) substrates using various
InSb bilayers. The InSb bilayers were prepared using three types of initial
In-induced surface reconstructions on Si(111) substrates such as √3×√3-In,
2×2-In, and √7×√3-In.
The InSb films were grown using a two-step growth procedure. In the growth
procedure, the 1st layer was deposited using at a low growth rate of about 1
Å/min. The in-depth profile of the electrical properties of the InSb films was
obtained by reciprocally repeated chemical etching and Hall measurement. The
electron mobility of the films was gradually decreased with decreasing
thickness. The electron mobility at room temperature of the InSb film grown via
√7×√3-In
surface reconstruction was estimated to be about 61,000 cm2/(Vcenterdots) in
the region near the surface and about 20,000 cm2/(Vcenterdots) in the region
approximately 0.2 µm from the InSb/Si interface. These indicate that the high
electron mobility of the samples grown on the InSb bilayer using at a low
growth rate during the first layer deposition originated from the reduction of
the regions with low electron mobility near the InSb/Si interface.
Source:IOPscience
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