The n-type InSb films were prepared on
Si(111) substrates with a two-step growth method via an InSb bilayer. This
growth method consists of an initial low-temperature InSb layer growth and a
subsequent high-temperature InSb layer growth. In order to obtain a
heteroepitaxial InSb film with a high electron mobility, the growth conditions
of the first InSb layer were optimized. The first InSb layer was prepared at
higher growth temperatures. Moreover, the thickness of the first InSb layer
with a lower crystalline quality and poor electrical properties decreased. InSb
films prepared with new deposition conditions showed a higher crystalline
quality, a lower defects density, and better electrical properties than the
films indicated in our previous report. An InSb film with a high electron
mobility of 38,000 cm2/(Vcenterdots) which shows a high potential for new
high-speed device applications was obtained.
Source:IOPscience
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