High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of V/III ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2- -thick InSb epilayer grown at 450°C with a V/III ratio of 5 and an indium pre-deposition time of 2.5 s exhibits the optimum material quality, with a root-mean-square surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 104 cm2/ . These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10mV with the input voltage of 1V at 9.3mT and the electron mobility of 3.2 × 104 cm2/ is determined, which indicates a strong potential for Hall applications.
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