The growth of InSb-based compounds on GaAs, Si and InSb has received increased interest over the past few years due to the potential use for this material in integrated infrared imaging arrays. In this paper a new technique for the epitaxial growth of InSb is reported for the first time. The technique, based on the sputter deposition of InSb from solid InSb and Sb targets, magnetron sputter epitaxy (MSE), has been used to produce layers of relatively high structural and electrical quality and with excellent thickness uniformity and surface morphology. The electrical properties of p+/n diode test structures fabricated using these epilayers is presented.
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