We report the growth of InSb layers directly on GaAs (001)
substrates without any buffer layers by molecular beam epitaxy (MBE).
Influences of growth temperature and V/III flux ratios on the crystal quality,
the surface morphology and the electrical properties of InSb thin films are
investigated. The InSb samples with room-temperature mobility of 44600 cm
/Vs are grown under optimized growth conditions. The effect of
defects in InSb epitaxial on the electrical properties is researched, and we
infer that the formation of In vacancy (V
) and Sb anti-site (Sb
defects is the main reason for concentrations changing
with growth temperature and Sb
/In flux ratios. The mobility of the InSb sample as a function
of temperature ranging from 90 K to 360 K is demonstrated and the dislocation
scattering mechanism and phonon scattering mechanism are discussed.
Source:IOPscience
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