This paper discusses the
capacitance–voltage (C–V) characteristics of Al2O3/InSb/Si (1 1 1) MOS diodes
grown using MBE via InSb bi-layer with special care to the surface
reconstruction. This growth technique is based on our finding that the InSb
layer grown on a Si (1 1 1) substrate is rotated by 30° with respect to the
substrate under certain initial conditions. This rotation drastically reduces
the lattice mismatch from 19.3% to 3.3%, and improves the crystal quality of an
InSb layer. To investigate the possibilities of InSb MOSFETs on Si substrates,
we fabricated MOS diodes having an Al2O3 insulator film deposited by atomic
layer deposition. C–V characteristics were measured both at RT and 77 K. It was
found that the InSb grown on Si shows a degraded C–V curve compared to the InSb
substrate, even though the mobility of the grown layer is quite high. We also
investigated the effects of InSb thickness on the C–V characteristics of the
MOSFETs. It was found that the quality of MOS diodes first degrades when
decreasing the InSb thickness from 1 μm to 50 nm; further reduction of the InSb
thickness improves it again. It was demonstrated that the MOS diode having a 10
nm InSb layer shows a good C–V curve, which is comparable to that of the InSb
substrate. Finally, we discussed the possibility of the InSb/Si pseudomorphic
MOSFETs.
Source:IOPscience
For more information, please visit our website: www.semiconductorwafers.net,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
No comments:
Post a Comment