Tuesday, January 7, 2020

Strain energy of (111) and ([111 over bar]) surfaces of InSb

The strain energies per unit area of polished (0.1 μm powder) surfaces of InSb have been computed from the observed curvature of thin wafers polished on one side and etched on the other, as being of order 1 erg cm-2. These values are much larger than those computed by others from InSb wafers treated similarly on both sides and are ascribed only indirectly to surface bonding configurations.


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