Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor

Abstract

Schottky and pn junction detectors were fabricated with p-InSb. Fabrication methods, energy spectra of 241Am alpha particles and rise times are shown. We could observe pulses at operating temperatures up to 77 and 115 K for the Schottky and the pn junction detectors, respectively.

PACS

29.40.W

07.85.F

Keywords

Radiation detector;

Semiconductor;

Insb;

Source:DirectDirect

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