Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD

Highlights

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Single crystalline InSb nanowires with high uniformity have been obtained on InSb substrate.

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We realized controllable growth orientation of InSb nanowire by MOCVD.

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A vapor-solid-solid growth of mode was attributed to the InSb nanowire growth.

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The prepared InSb NWs show promise for future application in nanoelectronic devices.

Abstract

We have synthesized InSb nanorods on InSb substrates by using metal-organic chemical vapor deposition (MOCVD). It is found that the crystal orientation of the substrate plays a remarkable role in controlling growth orientation of the InSb nanorods. On a [100]-oriented InSb substrate, the nanorods tend to lie on the substrate along its [1–10]-axis. In comparison, [111]-oriented InSb substrates tend to promote the vertical growth of InSb nanowires and free-standing InSb nanowires are consequently obtained. The evolutions of diameter and length of the nanowires on InSb (111) substrates as a function of growth temperatures, T, and input V/III source ratios, rV/III, provide the optimized growth condition, i.e., T = 400 °C and rV/III = 50. The orientated growth of one-dimensional InSb nanostructures is discussed and analized by employing a vapor-solid-solid (VSS) growth mechanism.

Keywords

Nanostructures

InSb

III-V Semiconductors

Metal-organic chemical vapor deposition

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