A very long wavelength infrared(VLWIR) focal plane array based
on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A
hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2
m, at 77 K. A 320×256 VLWIR focal
plane array with this design was fabricated and characterized. The peak quantum
efficiency without an antireflective coating was 25.74% at the reverse bias
voltage of −20 mV, yielding a peak specific detectivity of
cm
Hz
W−1. The operability and the uniformity of response were 89% and
83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum
at 21.4 mK, corresponding to an average value of 56.3 mK.
Source:IOPscience
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