Tuesday, January 22, 2019

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

 A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2   m, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of −20 mV, yielding a peak specific detectivity of   cm Hz  W−1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.


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