Carrier-loss temperature dependence in liquid-phase epitaxially grown InSb detectors

We characterize 5.5 MeV alpha particles emitted from ²⁴¹Am with a liquid-phase epitaxially grown InSb crystal detector at operating temperatures ranging from 5 to 104 K. The pulse height of the energy peak of alpha particles rapidly decreases at temperatures above 40 K. We explain this behavior of the peak channel numbers as a function of temperature using a model of the recombination and trapping of generated electrons and holes.

Keywords

• Radiation detector; 
• InSb; 
• Carrier recombination
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  SOURCE:Sciencedirector
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