Structural and optical properties of silicon layers with InSb and InAs nanocrystals formed by ion-beam synthesis

We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO₂/Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8 to 3.5 × 10¹⁶ cm⁻² at 500 °C and subsequent annealing at 1050–1100 °C for 3–30 min. RBS, TEM/TED, RS and PL techniques were employed to characterize the implanted layers. A broad band in the region of 1.2–1.6 μm has been registered in the low-temperature PL spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals. It was shown that structural and optical properties of oxidized silicon crystals strongly depend on type of implanted species in silicon crystals.

Keywords

• Crystalline silicon; 
• High-fluency ion implantation; 
• InSb and InAs nanocrystals;
• Structure; 
• Photoluminescence
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      SOURCE:Sciencedirector
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