Monday, April 13, 2020

Photosensitive Sb-n-InSb Schottky barrier diodes

The current–voltage and capacitance–voltage characteristics of Sb-n-InSb metal-semiconductor contacts with a Schottky barrier fabricated by pulsed laser deposition and subsequent thermal annealing were measured at 77 K. By comparing with the general theory for such contacts that takes into account the presence of a tunnel-transparent dielectric interfacial layer and surface states, all contact parameters were determined. The structures demonstrated large photosensitivity in the 3–5 μm spectral region and thus can be used for efficient, broadband, and fast photodetection in the mid-IR range.


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