Monday, November 11, 2019

High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

Compound semiconductor InSb crystals were grown using raw materials with different purities, for application as radiation detector substrates. The electrical properties of the grown crystals were compared with those of commercial InSb wafers. The resistivity of the grown crystals prepared from 99.9999% purity raw materials showed a higher value than those of commercial crystals.


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