Monday, March 18, 2019

Deep Levels in n-Type Undoped and Te-doped InSb Crystals

Deep levels in InSb crystals used for photodiodes have been investigated. An electron trap was found at 0.10 and 0.12 eV below the conduction band in n-type undoped and Te-doped InSb, respectively. A hole trap was observed in both specimens and its level in a Te-doped specimen was estimated to be 0.032 eV above the valence band. The distribution profile and electron capture cross section of the electron traps were also measured.


For more information, please visit our website:,
send us email at and

No comments:

Post a Comment