Deep Levels in n-Type Undoped and Te-doped InSb Crystals
Deep levels in InSb crystals used for photodiodes have been investigated. An electron trap was found at 0.10 and 0.12 eV below the conduction band in n-type undoped and Te-doped InSb, respectively. A hole trap was observed in both specimens and its level in a Te-doped specimen was estimated to be 0.032 eV above the valence band. The distribution profile and electron capture cross section of the electron traps were also measured.